[Satnews] The use of over-molded SMT plastic packaging greatly simplifies handling and assembly and reduces unit cost.
However, as operating frequencies and RF output power increase, so do the challenges of using SMT packaging. This free Keysight Technologies webcast that takes place on December 3 from 10:00 a.m. Pacific Time / 1:00 p.m. Eastern Time describes the design of power amplifiers (PAs) at X-band using plastic packaged SMT GaN transistors.
The design approach is illustrated with a detailed description of the design, layout, EM simulation, fabrication and evaluation of a single stage 5W X-band GaN PA. The amplifier is optimized for the 9.3 to 9.5GHz band, has 11dB small signal gain and provides more than +37dBm output power at 3dB gain compression with a corresponding drain efficiency of greater than 55 percent. The design is based on a commercially available discrete 0.25µm GaN transistor (the TGF2977-SM from Qorvo) mounted on Rogers 4003 PCB. Fast drain switching circuitry is also included on the same PCB to facilitate pulsed operation with a turn-on time of just 20ns.