Teledyne e2v is launching a complete GaN power solution based on technology from pSemi (formerly Peregrine Semiconductor) and GaN Systems.
Gallium nitride devices have revolutionized power conversion in other industries and are now available as radiation tolerant, space-qualified devices. The release of these GaN FETs (Field-Effect Transistor) and the industry’s fastest half-bridge GaN driver finally provide the efficiency, size, and power-density benefits required in satellite systems’ critical power applications. The device prototypes are now available for purchase.
Teledyne’s ceramic TDG100E15 100V 15A FET and TDG100E30 100V 30A FET both utilize GaN Systems’ patented Island Technology® which is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds. The use of industry standard SMD 0.5 ceramic packaging allows very high frequency switching, excellent thermal characteristics, and a reduced time-to-market.
The second part of the GaN solution is the industry’s fastest half-bridge GaN Driver based on pSemi’s UltraCMOS® technology. The Teledyne TD99101 25 MHz GaN Driver features a ruggedized design and is qualified for operation in harsh environments, including space. The device contains both high-side and low-side GaN drivers capable of sourcing 1A and sinking 2A of current. In addition, it is designed to work with the very low latency and high switching speeds required for GaN system-based Teledyne parts. The TD99101 is the only driver capable of extracting the highest performance and speed benefits of Teledyne’s TDG100E GaN FETs.
To facilitate implementation of GaN technology from Teledyne, the TD99101-x00 evaluation kit is available, and it features both the TD99101 GaN Driver and TDG100E15 100V, 15A GaN FET. The evaluation kit operates at frequencies up to 13 MHz and allows customer to evaluate Teledyne’s GaN parts quickly.
Both devices are radiation tolerant, suitable for space applications, and have ceramic-packaged prototypes available now. They are manufactured on a MIL-PRF-38535 Class V-like flow.
The solution features GaN FETs and the industry’s first rad-tolerant, half-bridge power driver for GaN high-reliability applications. The technology will be demonstrated at Satellite 2018, March 12-15, in the Teledyne Defense Electronics booth (#619).
Mont Taylor, VP of Business Development for Teledyne e2v, noted that the wide range of capabilities of these devices enable design engineers to create highly efficient power supply and motor control applications which can function in radiation environments.