[SatNews] Northrop Grumman Corporation (NYSE:NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.

The APN228 and APN229 power amplifiers were developed with the company's proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 and 8 watts, respectively. These second-generation power amplifiers offer the highest power density of any existing Ka-band GaN product on the market. The broadband, two-stage amplifiers operate from 27 to 31GHz, and, when integrated in high efficiency solid-state power amplifiers (SSPAs), allow for higher data rate in communication systems.

APN228

• The APN228 is a 16.0 mm2 GaN HEMT power amplifier that operates between 27 and 31GHz
• This MMIC PA provides 19.5 dB of linear gain, 41.2 dBm (13 W) of saturated output power and Power Added Efficiency (PAE) greater than 27 percent
• Exhibits excellent linearity
• Excellent option for next generation high power and efficiency SSPAs for commercial and military satellite applications

APN229

• The APN229 is a 7.41 mm2 GaN HEMT power amplifier that operates between 27 and 31GHz
• This MMIC PA provides 20 dB of linear gain, 39 dBm (8 W) of saturated output power and PAE greater than 30 percent
• Exhibits excellent linearity
• Complimentary driver amplifier to the APN228

Samples of these MMIC power amplifiers will be available by mid-July, and packaged versions will be available for sampling later this year. Information and data sheets on the Ka-band and other GaN power amplifiers are available online at http://www.northropgrumman.com/mps