...GaN HEMT transistors for SATCOM and commercial radar applications. Rated at 50W and 100W, these new GaN devices deliver “game- changing” efficiency and performance improvements when compared to existing GaAs MESFET transistors or Traveling Wave Tube (TWT) based amplifiers. The X-Band product family consists of four new GaN HEMT transistors; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a small footprint (0.9 x 0.7”) package.

The efficiency advantages in using these new GaN devices can be up to three times greater when compared to available GaAs MESFET transistors. Further, the wide video bandwidth of GaN HEMT transistors allows for their use in multi-carrier applications with two-tone spacing up to 70MHz. The fully matched GaN HEMT transistors complement two previously released packaged MMICs, designated the CMPA5585025F and CMPA801B025F, which can also be used as drivers for the CGHV96050 or CGHV96100.