....for Mitsubishi Electric’s nonlinear GaAs and GaN RF devices is now available for use with Agilent’s Advanced Design System. The upgraded library works seamlessly with ADS 2009 Update 1, as well as prior ADS releases. ADS2011 and future versions will also be supported. The model can be obtained by contacting Mitsubishi Electric.
The new ADS model library includes high-power GaN HEMT and low-noise HEMT devices commonly used in base station and direct-broadcast satellite receivers as well as other radio communications equipment. The library helps designers better explore design alternatives in order to meet demanding performance specifications with a cost-effective solution. The library includes an ADS symbol for schematic capture, a simulation model that includes parasitic effects. It also covers a broad variety of body sizes and part values that enable sweeps and optimizations. Customers can also generate X-parameter™ models of their circuit-level designs directly from ADS. X-parameters provide fast and accurate behavioral modeling. These capabilities are vital to designing high-performance RF modules and RF system-in-package components.